Invited talks


Plenary Speakers

gFirst-principles study of Si CMOS materials and nanostructuresh
K.-J. Chang (KAIST, Korea)

gTCAD challenges and some Fraunhofer solutionsh
J. Lorenz (Fraunhofer IISB, Germany)

gCritical Analysis of 14nm Device Optionsh
P. Oldiges (IBM Corp, USA)


Invited Speakers

gDensity Functional Theory Based Simulation of Carrier Transport in Silicon Carbide and Silicon Carbide-Silicon Dioxide Interfacesh
A. Akturk (Univ. Maryland, USA)

gThe Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technologyh
A. Martinez (Univ. Swansea, UK)

gA Spice-based multi-physics simulation technique for integrated MEMSh
H. Toshiyoshi (Univ. Tokyo, Japan)