Invited talks
gFirst-principles
study of Si CMOS materials and nanostructuresh
K.-J.
Chang (KAIST, Korea)
gTCAD
challenges and some Fraunhofer solutionsh
J.
Lorenz (Fraunhofer IISB, Germany)
gCritical Analysis of 14nm Device Optionsh
P.
Oldiges (IBM Corp, USA)
Invited Speakers
gDensity Functional Theory Based Simulation of Carrier Transport in Silicon
Carbide and Silicon Carbide-Silicon Dioxide Interfacesh
A.
Akturk (Univ. Maryland, USA)
gThe
Non-Equilibrium Green Function approach as a TCAD tool for future CMOS
technologyh
A. Martinez (Univ. Swansea, UK)
gA
Spice-based multi-physics simulation technique for integrated MEMSh
H.
Toshiyoshi (Univ. Tokyo, Japan)