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15:50 - 16:10 |
Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects |
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N. Sadachika, H. Oka, R. Tanabe, T. Murakami, H. J. Mattausch, M. Miura-Mattausch |
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16:10 - 16:30 |
Modeling NAND Flash Memories for Circuit Simulations |
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L. Larcher, A. Padovani, P. Pavan, I. Rimmaudo, A. Calderoni, G. Molteni, F. Gattel, P. Fantini |
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16:30 - 16:50 |
Surface-Potential Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET |
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A. Serov, S.-M. Hong, Y. J. Park, H. S. Min |
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16:50 - 17:10 |
Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation |
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B. Cheng, S. Roy, A. Asenov |
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