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	15:50 - 16:10	Transient Characterization of Interface Traps in 4H-SiC MOSFETs
		S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis
	16:10 - 16:30	Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-Power Conditions
		L. M. Hillkirk, A. R. Hefner, R. W. Dutton, S. B. Bayne, H. O'Brien
	16:30 - 16:50	Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes
		D. Werber, G. Wachutka
	16:50 - 17:10	Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures
		U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyer, G. Wachutka

	15:50 - 16:10	Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands
		A.-T. Pham, C. Jungemann, B. Meinerzhagen
	16:10 - 16:30	Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs
		Y. Ohkura, C. Suzuki
	16:30 - 16:50	Modeling of Macroscopic Transport Parameters in Inversion Layers
		M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser
	16:50 - 17:10	Study of the Junction Depth Effect on Ballistic Current Using Subband Decomposition Method
		M. A. Pourghaderi, W. Magnus, B. Sorée, M. Meuris, M. Heyns, K. De Meyer