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	09:20 - 09:40	Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation
		S.-M. Hong, H.-H. Park, C. H. Park, M. J. Lee, H. S. Min, Y. J. Park
	09:40 - 10:00	Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs
		Y. Ashizawa, H. Oka
	10:00 - 10:20	'Atomistic' Mesh Generation for the Simulation of Semiconductor Devices
		M. Aldegunde, A. J. García-Loureiro, P. V. Sushko, A. Shluger, K. Kalna, A. Asenov
	10:20 - 10:40	Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs
		T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Hoentschel, T. Feudel, M. Horstmann

	09:20 - 09:40	Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL
		H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, E. Tsukuda, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue
	09:40 - 10:00	Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs
		S. Yamakawa, J. Wang, Y. Tateshita, K. Nagano, M. Tsukamoto, H. Ohri, N. Nagashima, H. Ansai
	10:00 - 10:20	Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner
		K. H. Bach, R. Liebmann, M. Nawaz, C. Jungemann, E. Ungersboeck
	10:20 - 10:40	3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor
		F. M. Bufler, L. Sponton, R. Gautschi