Tuesday, 25 September 2007
Session 2A: Process SImulation II
| 11:00 - 11:20 | Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants |
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| L. P. Huang, K. C. Ku, Y. M. Sheu, C. F. Nieh, C. H. Chen, H. Chang, L. T. Wang, T. L. Lee, C. C. Wang, C. H. Diaz | |||
| 11:20 - 11:40 | Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth | ||
| H. Ceric, A. Nentchev, E. Langer, S. Selberherr | |||
| 11:40 - 12:00 | Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias | ||
| C. Awo-Affouda, M. O. Bloomfield, T. S. Cale | |||
| 12:00 - 12:20 | Modeling of Re-sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology |
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| B. Hwang, Y. Lee, J.-G. Min, H. Shin, N. Lim, S. Kim, W.-Y. Chung, T.-K. Kim, J.-H. Park, Y.-K. Lee, D. Kwak, J. Park, W.-S. Lee |
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| 12:20 - 12:40 | Efficient Mask Design for Inverse Lithograph Technology Based on 2D Discrete Cosine Transformation (DCT) |
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| J. Zhang, W. Xiong, M.-C. Tsai, Y. Wang, Z. Yu | |||
| 12:40 - 13:00 | Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment | ||
| A. Hoessinger, Z. Djuric, A. Babayan |
Session 2B: Electronic Transport I
| 11:00 - 11:20 | Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs | ||
| C. Fiegna, M. Braccioli, S. C. Brugger, F. M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi | |||
| 11:20 - 11:40 | Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs | ||
| S. Jin, M. V. Fischetti, T.-W. Tang | |||
| 11:40 - 12:00 | Pearson Effective Potential Vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFET | ||
| M.-A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen | |||
| 12:00 - 12:20 | Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems | ||
| C. Jungemann | |||
| 12:20 - 12:40 | Energy Conservation in Collisional Broadening | ||
| Z. Aksamija, U. Ravaioli | |||
| 12:40 - 13:00 | A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells | ||
| J. Kim, C.-Y. Chen, R. W. Dutton |
