Tuesday, 25 September 2007
Session 1A: Process Simulation I
| 09:40 - 10:00 | Atomistic Modeling of Defect Diffusion in SiGe | ||
| P. Castrillo, R. Pinacho, J. E. Rubio, L. M. Vega, M. Jaraiz | |||
| 10:00 - 10:20 | Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches | ||
| A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul, W. Lerch | |||
| 10:20 - 10:40 | Molecular Dynamics Modeling of Octadecaborane Implantation into Si | ||
| L. A. Marqués, L. Pelaz, I. Santos, P. López, M. Aboy |
Session 1B: Strain I
| 09:40 - 10:00 | High Performance Strained Germanium Heterostructure FETs | ||
| T. Krishnamohan, D. Kim, C. Jungemann, A.-T. Pham, B. Meinerzhagen, Y. Nishi, K. C. Saraswat | |||
| 10:00 - 10:20 | Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations |
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| H. Takeda, T. Ikezawa, M. Kawada, M. Hane | |||
| 10:20 - 10:40 | Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-node pMOSFETs |
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| E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue, K. Taniguchi |
