Tuesday, 25 September 2007
Poster Session
| P1 | Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors | ||
| O. M. Nayfeh, D. A. Antoniadis | |||
| P2 | The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNTFETs | ||
| M. Pourfath, H. Kosina | |||
| P3 | Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes | ||
| H.-N. Nguyen, H. Cazin d'Honincthun, C. Chapus, A. Bournel, S. Galdin-Retailleau, P. Dollfus, N. Locatelli | |||
| P4 | Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions | ||
| H. Kosina, O. Triebl, T. Grasser | |||
| P5 | A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire | ||
| W. Magnus, B. Soree, G. Pourtois, S. Compernolle | |||
| P6 | Efficient Green's Function Algorithms for Atomistic Modeling of Si-Nanowire FETs | ||
| A. Pecchia, G. Penazzi, A. Di Carlo | |||
| P7 | Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter |
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| V. A. Sverdlov, G. Karlowatz, E. Ungersboeck, H. Kosina | |||
| P8 | Maxwell Equations on Unstructured Grids Using Finite-Integration Methods | ||
| W.J. Schoenmaker, P. Meuris, E. Janssens, K.-J. van der Kolk, N. van der Meijs, W.H.A. Schilders | |||
| P9 | Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model | ||
| T. Shimada, S. Odanaka | |||
| P10 | MDS - A New Highly Extensible Device Simulator | ||
| T. D. Linton Jr., K. Foley, F. Heinz, R. Kotlyar, P. Matagne, A. Eremenko, S. Sergienko, M. Stettler, M. D. Giles, B. Voinov | |||
| P11 | Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories | ||
| Y. Song, G. Du, J. Yang, R. Jin, R. Han, K.-H. Lee, X. Liu | |||
| P12 | On the Magnetic Field Extraction for On-Chip Inductance Calculation | ||
| A. Nentchev, S. Selberherr | |||
| P13 | EMC Simulation of THz Emission from Semiconductor Devices | ||
| V. M. Polyakov, F. Schwierz | |||
| P14 | Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric |
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| C.-C. Wang, K.-S. Chang-Liao, C.-Y. Lu, T.-K. Wang | |||
| P15 | Challenges in 3D Process Simulation for Advanced Technology Understanding | ||
| S. M. Cea, A. Eremenko, P. Fleischmann, M. D. Giles, S. Halama, F. O. Heinz, A. N. Ivanov, P. H. Keys, A. D. Lilak | |||
| P16 | Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature | ||
| Y. Li, C.-H. Hwang, S.-M. Yu, H.-M. Huang, T.-C. Yeh, H.-W. Cheng, H.-M. Chen, J.-R. Hwang, F.-L. Yang | |||
| P17 | Hot-Carrier Behaviour of a 0.35nm High-Voltage n-Channel LDMOS Transistor | ||
| J.-M. Park, H. Enichlmair, R. Minixhofer | |||
| P18 | Dynamic Monte Carlo Simulation of an Amorphous Organic Device | ||
| G. Meller, L. Li, S. Holzer, H. Kosina | |||
| P19 | Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation | ||
| L. Li, G. Meller, H. Kosina | |||
| P20 | Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors | ||
| R. Wang, J. Zhuge, R. Huang | |||
| P21 | Analysis of Process-Geometry Modulations in a 65 nm Technology Through 3D TCAD | ||
| L. Sponton, L. Bomholt, W. Fichtner | |||
| P22 | Asymmetrical Triple-Gate FET | ||
| M.-H. Chiang, J.-N. Lin, K. Kim, C.-T. Chuang | |||
| P23 | Process Variation-Aware Estimation of Static Leakage Power in Nano CMOS | ||
| B. P. Harish, N. Bhat, M. B. Patil | |||
| P24 | The Optimization of Low Power Operation SRAM Circuit for 32nm Node | ||
| R. Tanabe, H. Anzai, Y. Ashizawa, H. Oka | |||
| P25 | Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation | ||
| M. Nawaz, S. Decker, L.-F. Giles, W. Molzer, T. Schulz, K. Schrüfer, R. Mahnkopf | |||
| P26 | Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs |
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| S.-D. Kim, B. Yang, S. Narasimha, A. Waite, K. Nummy, L. Black, H. Yin, H. J. Gossmann, S. Luning | |||
| P27 | Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism | ||
| T. Maruizumi, J. Ushio, Y. Shiraki | |||
| P28 | Process Margin Anaylsis and Yield Enhancement Through Statistical Topography Simulation | ||
| K.-B. Chang, W.-Y. Chung, S.-J. Kim, Y.-M. Ko, J.-J. Jang, T.-K. Kim, J.-K. Park, Y.-K. Park, M.-H. Yoo | |||
| P29 | Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation | ||
| O. Ertl, C. Heitzinger, S. Selberherr | |||
| P30 | Strained Contact Etch Stop Layer Integration: Geometry Design Impact | ||
| C. Populaire, D. Villanueva, S. Orain, H. Brillet-Rouxel | |||
| P31 | Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation | ||
| T. Ichikawa, T. Takase, N. Tamaoki | |||
| P32 | Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes | ||
| K. Hirose, N. Kobayashi, H. Ishii | |||
| P33 | Three-Dimensional Sacrificial Etching | ||
| J. Cervenka, H. Ceric, O. Ertl, S. Selberherr | |||
| P34 | Atomistic Study of Metal/High-K Interface | ||
| P.-Y. Prodhomme, P. Blaise, F. Fontaine-Vive, J. Even, M. Orlowski | |||
| P35 | Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon | ||
| Y.-K. Kim | |||
| P36 | Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green's Function Formalism | ||
| H.-H. Park, S.-M. Hong, S. Jin, H. S. Min, Y. J. Park | |||
| P37 | RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices | ||
| L. Oniciuc, P. Andrei |
