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	P1	Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors
		O. M. Nayfeh, D. A. Antoniadis
	P2	The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNTFETs
		M. Pourfath, H. Kosina
	P3	Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes
		H.-N. Nguyen, H. Cazin d'Honincthun, C. Chapus, A. Bournel, S. Galdin-Retailleau, P. Dollfus, N. Locatelli
	P4	Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions
		H. Kosina, O. Triebl, T. Grasser
	P5	A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire
		W. Magnus, B. Soree, G. Pourtois, S. Compernolle
	P6	Efficient Green's Function Algorithms for Atomistic Modeling of Si-Nanowire FETs
		A. Pecchia, G. Penazzi, A. Di Carlo
	P7	Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter
		V. A. Sverdlov, G. Karlowatz, E. Ungersboeck, H. Kosina
	P8	Maxwell Equations on Unstructured Grids Using Finite-Integration Methods
		W.J. Schoenmaker, P. Meuris, E. Janssens, K.-J. van der Kolk, N. van der Meijs, W.H.A. Schilders
	P9	Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model
		T. Shimada, S. Odanaka
	P10	MDS - A New Highly Extensible Device Simulator
		T. D. Linton Jr., K. Foley, F. Heinz, R. Kotlyar, P. Matagne, A. Eremenko, S. Sergienko, M. Stettler, M. D. Giles, B. Voinov
	P11	Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories
		Y. Song, G. Du, J. Yang, R. Jin, R. Han, K.-H. Lee, X. Liu
	P12	On the Magnetic Field Extraction for On-Chip Inductance Calculation
		A. Nentchev, S. Selberherr
	P13	EMC Simulation of THz Emission from Semiconductor Devices
		V. M. Polyakov, F. Schwierz
	P14	Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric
		C.-C. Wang, K.-S. Chang-Liao, C.-Y. Lu, T.-K. Wang
	P15	Challenges in 3D Process Simulation for Advanced Technology Understanding
		S. M. Cea, A. Eremenko, P. Fleischmann, M. D. Giles, S. Halama, F. O. Heinz, A. N. Ivanov, P. H. Keys, A. D. Lilak
	P16	Characteristic Fluctuation Dependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature
		Y. Li, C.-H. Hwang, S.-M. Yu, H.-M. Huang, T.-C. Yeh, H.-W. Cheng, H.-M. Chen, J.-R. Hwang, F.-L. Yang
	P17	Hot-Carrier Behaviour of a 0.35nm High-Voltage n-Channel LDMOS Transistor
		J.-M. Park, H. Enichlmair, R. Minixhofer
	P18	Dynamic Monte Carlo Simulation of an Amorphous Organic Device
		G. Meller, L. Li, S. Holzer, H. Kosina
	P19	Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation
		L. Li, G. Meller, H. Kosina
	P20	Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors
		R. Wang, J. Zhuge, R. Huang
	P21	Analysis of Process-Geometry Modulations in a 65 nm Technology Through 3D TCAD
		L. Sponton, L. Bomholt, W. Fichtner
	P22	Asymmetrical Triple-Gate FET
		M.-H. Chiang, J.-N. Lin, K. Kim, C.-T. Chuang
	P23	Process Variation-Aware Estimation of Static Leakage Power in Nano CMOS
		B. P. Harish, N. Bhat, M. B. Patil
	P24	The Optimization of Low Power Operation SRAM Circuit for 32nm Node
		R. Tanabe, H. Anzai, Y. Ashizawa, H. Oka
	P25	Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation
		M. Nawaz, S. Decker, L.-F. Giles, W. Molzer, T. Schulz, K. Schrüfer, R. Mahnkopf
	P26	Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs
		S.-D. Kim, B. Yang, S. Narasimha, A. Waite, K. Nummy, L. Black, H. Yin, H. J. Gossmann, S. Luning
	P27	Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism
		T. Maruizumi, J. Ushio, Y. Shiraki
	P28	Process Margin Anaylsis and Yield Enhancement Through Statistical Topography Simulation
		K.-B. Chang, W.-Y. Chung, S.-J. Kim, Y.-M. Ko, J.-J. Jang, T.-K. Kim, J.-K. Park, Y.-K. Park, M.-H. Yoo
	P29	Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation
		O. Ertl, C. Heitzinger, S. Selberherr
	P30	Strained Contact Etch Stop Layer Integration: Geometry Design Impact
		C. Populaire, D. Villanueva, S. Orain, H. Brillet-Rouxel
	P31	Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation
		T. Ichikawa, T. Takase, N. Tamaoki
	P32	Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes
		K. Hirose, N. Kobayashi, H. Ishii
	P33	Three-Dimensional Sacrificial Etching
		J. Cervenka, H. Ceric, O. Ertl, S. Selberherr
	P34	Atomistic Study of Metal/High-K Interface
		P.-Y. Prodhomme, P. Blaise, F. Fontaine-Vive, J. Even, M. Orlowski
	P35	Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon
		Y.-K. Kim
	P36	Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green's Function Formalism
		H.-H. Park, S.-M. Hong, S. Jin, H. S. Min, Y. J. Park
	P37	RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices
		L. Oniciuc, P. Andrei