• U. Aeberhard, R. Morf:
  "Microscopic Modeling of Quantum Well Solar Cells";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 237 - 240.
  
  
• Z. Aksamija, U. Ravaioli:
  "Energy Conservation in Collisional Broadening";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 73 - 76.
  
  
• A. Akturk, N. Goldsman, G. Pennington:
  "Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 225 - 228.
  
  
• M. Aldegunde, A. Garcia-Loureiro, P.V. Sushko, A.L. Shluger, K. Kalna, A. Asenov:
  "Atomistic Mesh Generation for the Simulation of Semiconductor Devices";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 97 - 100.
  
  
• Y. Ashizawa, H. Oka:
  "Thin Body Effects to Suppress Random Dopant Fluctuations in Nanoscaled MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 93 - 96.
  
  
• C.A. Awo-Affouda, M.O. Bloomfield, T.S. Cale:
  "Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D IC Cu Vias";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 41 - 44.
  
  
• K.H. Bach, R. Liebmann, M. Nawaz, C. Jungemann, E. Ungersboeck:
  "Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 113 - 116.
  
  
• E. Bahat-Treidel, V. Sidorov, J.H. Würfl, G. Tränkle:
  "Simulation of AlGaN/GaN HEMTs Breakdown Voltage Enhancement Using Grating Field Plates";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 277 - 280.
  
  
• A. Brannick, N.A. Zakhleniuk, B.K. Ridley, L.F. Eastman, J.R. Shealy, W.J. Schaff:
  "Modeling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 281 - 284.
  
  
• R. Brunetti, E. Piccinini:
  "Upcoming Physics Challenges for Device Modeling";
  Talk: Conference, Vienna, Austria (invited); 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 169 - 176.
  
  
• F.M. Bufler, L. Sponton, R. Gautschi:
  "3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 117 - 120.
  
  
• P. Castrillo, R. Pinacho, J.E. Rubio, L.M. Vega, M. Jaraiz:
  "Atomistic Modeling of Defect Diffusion in SiGe";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 9 - 12.
  
  
• S.M. Cea, A. Eremenko, P. Fleischmann, M.D. Giles, S. Halama, F.O. Heinz, A.N. Ivanov, P.H. Keys, A.D. Lilak:
  "Challenges in 3D Process Simulation for Advanced Technology Understanding";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 361 - 364.
  
  
• H. Ceric, A. Nentchev, E. Langer, S. Selberherr:
  "Intrinsic Stress Build-Up during Volmer-Weber Crystal Growth";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 37 - 40.
  
  
• J. Cervenka, H. Ceric, O. Ertl, S. Selberherr:
  "Three-Dimensional Sacrificial Etching";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 433 - 436.
  
  
• K.-B. Chang, W.-Y. Chung, S.-J. Kim, Y.-M. Ko, J.-J. Jang, T.-K. Kim, J.-K. Park, Y.-K. Park, M.-H. Yoo:
  "Process Margin Analysis and Yield Enhancement through Statistical Topography Simulation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 413 - 416.
  
  
• B. Cheng, S. Roy, A. Asenov:
  "Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 301 - 304.
  
  
• Y. Cheng, I.M. Gamba, A. Majorana, C.W. Shu:
  "Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 257 - 260.
  
  
• M.-H. Chiang, J.-N. Lin, K. Kim, C.-T. Chuang:
  "Asymmetrical Triple-Gate FET";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 389 - 392.
  
  
• A. Di Carlo:
  "Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 245 - 248.
  
  
• O. Ertl, C. Heitzinger, S. Selberherr:
  "Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 417 - 420.
  
  
• C. Fiegna, M. Braccioli, S. Brugger, F.M. Bufler, P. Dollfus, V. Aubry-Fortuna, C. Jungemann, B. Meinerzhagen, P. Palestri, S. Galdin-Retailleau, E. Sangiorgi, A. Schenk, L. Selmi:
  "Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 57 - 60.
  
  
• W. Gös, T. Grasser:
  "First-Principles Investigation on Oxide Trapping";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 157 - 160.
  
  
• X. Guan, Y. Tan, J. Lu, L. Tian, Y. Wang, Z. Yu:
  "A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 161 - 164.
  
  
• B.P. Harish, N. Bhat, M.B. Patil:
  "Process Variation-Aware Estimation of Static Leakage Power in Nano CMOS";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 393 - 396.
  
  
• T. Herrmann, W. Klix, R. Stenzel, S. Duenkel, R. Illgen, J. Höntschel, T. Feudel, M. Horstmann:
  "Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 101 - 104.
  
  
• L.M. Hillkirk, A.R. Hefner, R.W. Dutton, S.B. Bayne, H. O´Brien:
  "Electrothermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating under Pulsed Power Conditions";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 181 - 184.
  
  
• T. Hiramoto, K. Miyaji, M. Kobayashi:
  "Transport in Silicon Nanowire and Single-Electron Transistors";
  Talk: Conference, Vienna, Austria (invited); 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 209 - 216.
  
  
• K. Hirose, N. Kobayashi, H. Ishii:
  "Ab-Initio Calculations of the Transport through Single Molecules and Carbon Nanotubes";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 429 - 432.
  
  
• A. Hössinger, Z. Djuric, A. Babayan:
  "Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 53 - 56.
  
  
• S.-M. Hong, H.-H. Park, C.H. Park, M.J. Lee, H.S. Min, Y.-J. Park:
  "Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 89 - 92.
  
  
• C. Hu, M. Dunga, C.-H. Lin, D. Lu, A. Niknejad:
  "Compact Modeling for New Transistor Structures";
  Talk: Conference, Vienna, Austria (invited); 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 285 - 288.
  
  
• L.P. Huang, K.C. Ku, Y. Sheu, C.F. Nieh, C.H. Chen, H. Chang, L.T. Wang, T.L. Lee, C.-C. Wang, C.H. Diaz:
  "Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 33 - 36.
  
  
• B. Hwang, Y. Lee, J.-G. Min, H. Shin, N. Lim, S. Kim, W.-Y. Chung, T-K. Kim, J.-H. Park, Y.-K. Lee, D. Kwak, J. Park, W.-S. Lee:
  "Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 45 - 48.
  
  
• T. Ichikawa, T. Takase, N. Tamaoki:
  "Modeling of Deposition during C₅F₈/CO/O₂/Ar Plasma Etching Using Topography and Composition Simulation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 425 - 428.
  
  
• M.-A. Jaud, S. Barraud, J. Saint-Martin, A. Bournel, P. Dollfus, H. Jaouen:
  "Pearson Effective Potential versus Multi-Subband Monte Carlo Simulation for Electron Transport in DG n-MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 65 - 68.
  
  
• S. Jin, M.V. Fischetti, T.-W. Tang:
  "Surface Roughness Scattering in Ultrathin Body SOI MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 61 - 64.
  
  
• C. Jungemann:
  "Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 69 - 72.
  
  
• J. Kim, C.-Y. Chen, R.W. Dutton:
  "A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 77 - 80.
  
  
• S.-D. Kim, B. Yang, S. Narasimha, A. Waite, K. Nummy, L. Black, H. Yin, S. Luning:
  "Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance versus Overlap Capacitance in (100) and (110)-Oriented MOSFETs";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 405 - 408.
  
  
• Y.-K. Kim, S.-Y. Park, T. Won:
  "Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 441 - 444.
  
  
• U. Knipper, F. Pfirsch, T. Raker, J. Niedermeyr, G. Wachutka:
  "Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 189 - 192.
  
  
• H. Kosina, O. Triebl, T. Grasser:
  "Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 317 - 320.
  
  
• T. Krishnamohan, D. Kim, C. Jungemann, A.T. Pham, B. Meinerzhagen, Y. Nishi, K.C. Saraswat:
  "High Performance, Strained Ge, Heterostructure p-MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 21 - 24.
  
  
• N. Kusunoki, N. Yasutake, M. Awano, I. Mizushima, H. Yoshimura, S. Yamada, F. Matsuoka:
  "Impact of Two-Step Recessed SiGe S/D Engineering for Advanced p-MOSFETs of 32nm Technology Node and Beyond";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 121 - 124.
  
  
• L. Larcher, A. Padovani, P. Pavan, I. Rimmaudo, A. Calderoni, G. Molteni, F. Gattel, P. Fantini:
  "Modeling NAND Flash Memories for Circuit Simulations";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 293 - 296.
  
  
• L. Li, G. Meller, H. Kosina:
  "Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 377 - 380.
  
  
• Y. Li, C.-H. Hwang, S.-M. Yu, H.-M. Huang, T.-C. Yeh, H.-W. Cheng, H.-M. Chen, J.-R. Hwang, F.-L. Yang:
  "Characteristic Fluctuation Dependence on Discrete Dopants for 16nm SOI FinFETs at Different Temperature";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 365 - 368.
  
  
• T.D. Linton Jr., K. Foley, F.O. Heinz, R. Kotlyar, P. Matagne, A. Eremenko, S. Sergienko, M. Stettler, M.D. Giles, B. Voinov:
  "MDS - A New, Highly Extensible Device Simulator";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 341 - 344.
  
  
• J. Liu, G. Du, J. Cao, Z. Xia, Y. Wang, R. Han, X. Liu:
  "Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 253 - 256.
  
  
• H.-Y. Lo, Y. Li, H.-Y. Chao, C.-H. Tsai, F.-M. Pan, M.-C. Chiang, T.-C. Kuo, C.-N. Mo:
  "Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 233 - 236.
  
  
• M. Luisier, A. Schenk, W. Fichtner:
  "Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 221 - 224.
  
  
• W. Magnus, B. Soree, G. Pourtois, S. Compernolle:
  "A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 321 - 324.
  
  
• S. Markov, N. Barin, C. Fiegna, S. Roy, E. Sangiorgi, A. Asenov:
  "Analysis of Silicon Dioxide Interface Transition Region in MOS Structures";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 149 - 152.
  
  
• L.A. Marques, L. Pelaz, I. Santos, P. Lopez, M. Aboy:
  "Molecular Dynamics Modeling of Octadecaborane Implantation into Si";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 17 - 20.
  
  
• A. Martinez-Limia, C. Steen, P. Pichler, N. Gupta, W. Windl, S. Paul:
  "Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 13 - 16.
  
  
• T. Maruizumi, J. Ushio, Y. Shiraki:
  "Molecular Orbital Examination of Negative Bias Temperature Instability Mechanism";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 409 - 412.
  
  
• G. Meller, L. Li, S. Holzer, H. Kosina:
  "Dynamic Monte Carlo Simulation of an Amorphous Organic Device";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 373 - 376.
  
  
• H. Minari, N. Mori:
  "Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 229 - 232.
  
  
• A. Nakajima, K. Itagaki, K. Horio:
  "Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 265 - 268.
  
  
• M. Nawaz, S. Decker, L.-F. Giles, W. Molzer, T. Schulz, A. Schrüfer, R. Mahnkopf:
  "Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 401 - 404.
  
  
• O. Nayfeh, D.A. Antoniadis:
  "Calibrated Hydrodynamic Simulation of Deeply Scaled Well-Tempered Nanowire Field Effect Transistors";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 305 - 308.
  
  
• A. Nentchev, S. Selberherr:
  "On the Magnetic Field Extraction for On-Chip Inductance Calculation";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 349 - 352.
  
  
• N. Neophytou, A. Paul, M.S. Lundstrom, G. Klimeck:
  "Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 217 - 220.
  
  
• H.-N. Nguyen, H.C. d´Honincthu, C. Chapus, A. Bournel, S. Galdin-Retailleau, P. Dollfus, N. Locatelli:
  "Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 313 - 316.
  
  
• Y. Ohkura, C. Suzuki:
  "Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 197 - 200.
  
  
• T. Okada, A. Fathurahman, R. Takeda, H. Banba, H. Kubota, Y. Matsushita, M. Naito, S. Nakamura:
  "A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 133 - 136.
  
  
• L. Oniciuc, P. Andrei:
  "RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 449 - 452.
  
  
• H.-H. Park, S.-M. Hong, S. Jin, H.S. Min, Y.-J. Park:
  "Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green´s Function Formalism";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 445 - 448.
  
  
• J.- M. Park, H. Enichlmair, R. Minixhofer:
  "Hot Carrier Behaviour of a 0.35μm High-Voltage n-Channel LDMOS Transistor";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of. SISPAD", (2007), 978-3-211-72860-4; 369 - 372.
  
  
• A. Pecchia, G. Penazzi, A. Di Carlo:
  "Efficient Green´s Function Algorithms for Atomistic Modeling of Si Nanowire FETs";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 325 - 328.
  
  
• A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 193 - 196.
  
  
• P. Pichler:
  "Upcoming Challenges for Process Modeling";
  Talk: Conference, Vienna, Austria (invited); 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 81 - 88.
  
  
• M.R. Pinto:
  "Nanomanufacturing Technology and Opportunities through Physically-Based Simulation";
  Talk: Conference, Vienna, Austria (invited); 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 1 - 8.
  
  
• V.M. Polyakov, F. Schwierz:
  "EMC Simulation of THz Emission from Semiconductor Devices";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 353 - 356.
  
  
• C. Populaire, D. Villanueva, S. Orain, H. Brillet-Rouxel:
  "Strained Contact Etch Stop Layer Integration: Geometry Design Impact";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 421 - 424.
  
  
• S. Potbhare, N. Goldsman, G. Pennington, A. Akturk, A. Lelis:
  "Transient Characterization of Interface Traps in 4H-SiC MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 177 - 180.
  
  
• M. Pourfath, H. Kosina:
  "The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 309 - 312.
  
  
• M.A. Pourghaderi, W. Magnus, B. Soree, M. Meuris, M. Heyns, K. De Meyer:
  "Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 205 - 208.
  
  
• P.-Y. Prodhomme, P. Blaise, F. Fontaine-Vive, J. Even, M. Orlowski:
  "Atomistic Study of Metal/High-K Interface";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 437 - 440.
  
  
• D. Rideau, E. Batail, S. Monfray, C. Tavernier, H. Jaouen:
  "Modeling Study of Ultrathin Ge Layers Using Tight-Binding, LCBB and k·p Methods";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 145 - 148.
  
  
• F. Sacconi, A. Pecchia, M. Povolotskyi, A. Di Carlo, J.M. Jancu:
  "Tunneling Properties of MOS Systems Based on High-Κ Oxides";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 153 - 156.
  
  
• N. Sadachika, H. Oka, R. Tanabe, T. Murakami, H.J. Mattausch, M. Miura-Mattausch:
  "Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 289 - 292.
  
  
• T. Sadi, R.W. Kelsall:
  "Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 269 - 272.
  
  
• W. Schoenmaker, P. Meuris, E. Janssens, K.-J. van der Kolk, N. van der Meijs, W.H. Schilders:
  "Maxwell Equations on Unstructured Grids Using Finite-Integration Methods";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 333 - 336.
  
  
• I. Semenikhin, E. Vostrikova, A. Ivanov, V. Ryzhii:
  "Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 261 - 264.
  
  
• A.Y. Serov, S.-M. Hong, Y.-J. Park, H.S. Min:
  "Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 297 - 300.
  
  
• T. Shimada, S. Odanaka:
  "Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 337 - 340.
  
  
• J. Shimokawa, T. Enda, N. Aoki, H. Tanimoto, S. Ito, Y. Toyoshima:
  "Modeling of NBTI Degradation for SiON p-MOSFET";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 141 - 144.
  
  
• Y. Song, G. Du, J. Yang, R. Jin, R. Han, K.-H. Lee, X. Liu:
  "Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 345 - 348.
  
  
• K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue:
  "Compact Modeling of Phase-Change Memories";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 137 - 140.
  
  
• L. Sponton, L. Bomholt, W. Fichtner:
  "Analysis of Process-Geometry Modulations through 3D TCAD";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 385 - 388.
  
  
• K. Suzuki, Y. Ito, H. Miura:
  "Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO₂";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 165 - 168.
  
  
• V.A. Sverdlov, G. Karlowatz, E. Ungersboeck, H. Kosina:
  "Influence of Uniaxial (110) Stress on the Silicon Conduction Band Structure: Stress Dependence of the Non-Parabolicity Parameter";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 329 - 332.
  
  
• H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, E. Tsuda, K. Eikyu, S. Wakahara, K. Ishikawa, O. Tsuchiya, Y. Inoue:
  "Impact of Shear Strain and Quantum Confinement on (110) Channel n-MOSFET with High-Stress CESL";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 105 - 108.
  
  
• H. Takeda, T. Ikezawa, M. Kawada, M. Hane:
  "Strain Induced Drain-Current Enhancement Mechanism in Short Channel Bulk Ge p-MOSFETs with Different Channel and Surface Orientations";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 25 - 28.
  
  
• R. Tanabe, H. Anzai, Y. Ashizawa, H. Oka:
  "The Optimization of Low Power Operation SRAM Circuit for 32nm Node";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 397 - 400.
  
  
• J.-L. Thobel, O. Bonno, F. Dessenne:
  "Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 241 - 244.
  
  
• E.-H. Toh, G.H. Wang, L. Chang, G. Samudra, Y.-C. Yeo:
  "Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 129 - 132.
  
  
• E. Tsukuda, Y. Kamakura, H. Takashino, T. Okagaki, T. Uchida, T. Hayashi, M. Tanizawa, K. Eikyu, S. Wakahara, K. Ishikawa, S. Tsuchiya, Y. Inoue, K. Taniguchi:
  "Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm Node p-MOSFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 29 - 32.
  
  
• M. Vasicek, M. Karner, E. Ungersboeck, M. Wagner, H. Kosina, T. Grasser:
  "Modeling of Macroscopic Transport Parameters in Inversion Layers";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 201 - 204.
  
  
• S. Vitanov, V. Palankovski, S. Murad, T. Rödle, R. Quay, S. Selberherr:
  "Hydrodynamic Modeling of AlGaN/GaN HEMTs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 273 - 276.
  
  
• C.C. Wang, K.-S. Chang-Liao, C.-Y. Lu, T.-K. Wang:
  "Enhanced Band-to-Band Tunneling-Induced Hot Electron Injection in p-Channel Flash by SiGe Channel and HfO₂ Tunnel Dielectric";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 357 - 360.
  
  
• R. Wang, J. Zhuge, R. Huang:
  "Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors";
  Poster: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 381 - 384.
  
  
• X. Wang, A. Bryant, O. Dokumaci, P. Oldiges, W. Haensch:
  "Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 125 - 128.
  
  
• H. Watanabe:
  "Hopping Transport of Electrons via Si Dot";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 249 - 252.
  
  
• D. Werber, G. Wachutka:
  "Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 185 - 188.
  
  
• S. Yamakawa, J. Wang, Y. Tateshita, K. Nagano, M. Tsukamoto, H. Ohri, N. Nagashima, H. Ansai:
  "Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 109 - 112.
  
  
• J. Zhang, W. Xiong, M.-C. Tsai, Y. Wang, Z. Yu:
  "Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)";
  Talk: Conference, Vienna, Austria; 09-25-2007 - 09-27-2007; in: "Proc. of SISPAD", (2007), 978-3-211-72860-4; 49 - 52.