Committee

Organization:

Steering Chair	K. Taniguchi (Osaka Univ.)
Conference Chair	M. Hane (NEC Corp.)
Program Chair	N. Sano (Univ. of Tsukuba)
Program Co-Chair	K. Matsuzawa (Toshiba Corp.)
Treasurer	K. Fukuda (Oki Electric Ind. Co.,Ltd.)
Secretary	Y. Oda (Matsushita Electric Industrial Co.,Ltd)
Local Arrangements	H. Oka (Fujitsu Laboratories Ltd.)
Liaison	S. Odanaka (Osaka Univ.)
	T. Toyabe (Toyo Univ.)
Publication	M. Kimura (Sony Corp.)

International Steering Committee:

M. Hane (NEC Corp., Japan)
P. Leon (Nanosys, Inc., USA)

K. Mayaram (Oregon State Univ., USA)
N. Nakayama (STARC, Japan)

S. Odanaka (Osaka Univ., Japan)
P. Oldiges (IBM, USA)

S. Selberherr (Technische Univ. Wien, Austria)
D. Tsoukalas (IMEL Demokritos, Greece)

G. Wachutka (Technische Univ. Muenchen, Germany)

Advisory Committee:

Chair
K. Taniguchi (Osaka Univ., Japan)

Members
K. Asada (Univ. of Tokyo, Japan)

S. Asai (Hitachi Medical Corp., Japan)

R. Dutton (Stanford Univ., USA)

M. Fukuma (NEC Electronics Corp., Japan)

A. Morino (Selete, Japan)

T. Nakamura (Fujitsu Labs., Japan)

T. Nishimura (Renesas Technol. Corp., Japan)

S. Selberherr (Technische Univ. Wien, Austria)

A. Yoshii (Japan Women's Univ., Japan)

Technical Program Committee:

Chair
N. Sano (Univ. of Tsukuba, Japan)

Co-Chair
K. Matsuzawa (Toshiba Corp., Japan)

Members
R. Brunetti (Univ. of Modena, Italy)

S. Dunham (Univ. of Washington, USA)

K. Fukuda (Oki, Japan)

N. Goldsman (Univ. of Maryland, USA)

T. Grasser (Technical Univ. Vienna, Austria)

A. Heringa (Philips, Netherlands)

K. Ishikawa (Renesas Technol. Corp., Japan)

T. Iwasaki (Hitachi, Japan)

S. Jones (Bookham Tech, UK)

Y. Kamakura (Osaka Univ., Japan)

M. Kimura (Sony, Japan)

J.-T. Kong (Samsung, Korea)

P. Leon (Nanosys Inc., USA)

J. Lorenz (Fraunhofer, Germany)

K. Mayaram (Oregon State Univ., USA)

M. Miura-Mattausch (Hiroshima Univ., Japan)

Y. Oda (Matsushita Electric Industrial, Japan)

M. Ogawa (Kobe Univ., Japan)

Y. Ohkura (Selete, Japan)

H. Oka (Fujitsu Labs., Japan)

P. Oldiges (IBM, USA)

M. Orlowski (Freescale Semiconductor, USA)

G. Wachutka (Tchnische Univ. Muenchen, Germany)

C.-C Wang (TSMC, Taiwan)

M. Hane (NEC Corp., Japan)	P. Leon (Nanosys, Inc., USA)
K. Mayaram (Oregon State Univ., USA)	N. Nakayama (STARC, Japan)
S. Odanaka (Osaka Univ., Japan)	P. Oldiges (IBM, USA)
S. Selberherr (Technische Univ. Wien, Austria)	D. Tsoukalas (IMEL Demokritos, Greece)
G. Wachutka (Technische Univ. Muenchen, Germany)

Chair	K. Taniguchi (Osaka Univ., Japan)
Members	K. Asada (Univ. of Tokyo, Japan)
	S. Asai (Hitachi Medical Corp., Japan)
	R. Dutton (Stanford Univ., USA)
	M. Fukuma (NEC Electronics Corp., Japan)
	A. Morino (Selete, Japan)
	T. Nakamura (Fujitsu Labs., Japan)
	T. Nishimura (Renesas Technol. Corp., Japan)
	S. Selberherr (Technische Univ. Wien, Austria)
	A. Yoshii (Japan Women's Univ., Japan)

Chair	N. Sano (Univ. of Tsukuba, Japan)
Co-Chair	K. Matsuzawa (Toshiba Corp., Japan)
Members	R. Brunetti (Univ. of Modena, Italy)
	S. Dunham (Univ. of Washington, USA)
	K. Fukuda (Oki, Japan)
	N. Goldsman (Univ. of Maryland, USA)
	T. Grasser (Technical Univ. Vienna, Austria)
	A. Heringa (Philips, Netherlands)
	K. Ishikawa (Renesas Technol. Corp., Japan)
	T. Iwasaki (Hitachi, Japan)
	S. Jones (Bookham Tech, UK)
	Y. Kamakura (Osaka Univ., Japan)
	M. Kimura (Sony, Japan)
	J.-T. Kong (Samsung, Korea)
	P. Leon (Nanosys Inc., USA)
	J. Lorenz (Fraunhofer, Germany)
	K. Mayaram (Oregon State Univ., USA)
	M. Miura-Mattausch (Hiroshima Univ., Japan)
	Y. Oda (Matsushita Electric Industrial, Japan)
	M. Ogawa (Kobe Univ., Japan)
	Y. Ohkura (Selete, Japan)
	H. Oka (Fujitsu Labs., Japan)
	P. Oldiges (IBM, USA)
	M. Orlowski (Freescale Semiconductor, USA)
	G. Wachutka (Tchnische Univ. Muenchen, Germany)
	C.-C Wang (TSMC, Taiwan)