Conference Program
Wednesday 5 September 2001
8.00 |
Registration |
8.45 |
SISPAD 2001 Opening |
|
SESSION 1: Plenary Aristotelis Hall (Chairperson: S. Selberherr) |
9.00 |
Macroscopic Quantum Carrier Transport Modeling (Invited) Zhiping Yu, R. W. Dutton, and Daniel W. Yergeau Center for Integrated Systems, Stanford University, USA |
9.45 |
Atomistic Front-End Process Modelling: A Powerful Tool for Deep- Submicron
Device Fabrication (Invited) M. Jaraiz, P. Castrillo, R. Pinacho, I. Martin-Bragado, and J. Barbolla Dept. de Electronica, Univ. of Valladolid, Spain |
10.30 |
Coffee
Break
|
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SESSION 2: Process Modeling I Aristotelis Hall (Chairperson: S. Dunham) |
11.00 |
Monte
Carlo Impurity Diffusion Simulation Considering Charged Species Masami Hane1,
Takeo Ikezawa1 and George H. Gilmer2 1Silicon
Systems Research Laboratories, NEC Corporation, Japan 2Agere
Systems, USA |
11.20 |
A Novel Model for Boron Diffusion in SiGe Strained
Layers Based on a Kinetics Driven Ge-B Pairing Mechanism D. Villanueva1,
P. Moens1, K. Rajendran2 and W. Schoenmaker2 1Alcatel
Microelectronics, Belgium 2IMEC,
Belgium |
11.40 |
The Role of Incomplete
Interstitial-Vacancy Recombination on Silicon Amorphization Luis A. Marqués, Lourdes Pelaz, Jesús Hernández and Juan
Barbolla Departamento de
Electrónica, Universidad de Valladolid, Spain |
12.00 |
Atomistic
simulations of extrinsic defects evolution and transient enhanced diffusion in silicon F. Cristiano1, B. Colombeau2, C.
Bonafos2, J. Aussoleil2, G. Ben Assayag2 and A. Claverie2 1LAAS/CNRS, France 2CEMES/CNRS, France |
12.20 |
Initial Conditions for
Transient Enhanced Diffusion: Beyond the Plus-Factor
Approach G. Hobler1
and V. Moroz2 1Univ. of
Technology Vienna, Austria 2Avant! Corporation, USA |
|
SESSION 3 : Device:
MC DeviceSimulation Athina Hall (Chairperson: N.
Goldsman) |
11.00 |
Local
Iterative Monte Carlo investigation of the influence of electron-electron scattering on
short channel Si-MOSFETs J. Jakumeit1, U. Ravaioli2 1Institute
for Algorithm and Scientific Computing (SCAI), GMD-German
National Research Center for Information Technology, Germany 2Beckman
Institute, University of Illinois at UC, USA |
11.20 |
Simplified Inelastic
Acoustic-Phonon Hole Scattering Model for Silicon F.
M. Bufler, A. Schenk and W. Fichtner Institut für
Integrierte Systeme, ETH Zürich, Switzerland |
11.40 |
An
Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects T. Grasser, H. Kosina
and S. Selberherr Institute for
Microelectronics, TU Vienna, Austria |
12.00 |
Density
of States and Group Velocity Calculations for SiO2 E.
Gnani, S. Reggiani, and M. Rudan Dipartimento di
Elettronica, Università di Bologna, Italy |
12.20 |
Investigation
of Spurious Velocity Overshoot Using Monte Carlo Data T.
Grasser, H. Kosina and S. Selberherr Institute of
Microelectronics, TU Vienna, Austria |
12.40 |
Lunch
|
|
SESSION 4: Process Modeling II - Aristotelis Hall (Chairperson: N.
Cowern) |
14.00 |
Elasto-Plastic
Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses
in Advanced Silicon Technologies Vincent
Senez and Thomas Hoffmann IEMN-ISEN, France |
14.20 |
A Unified Model of
Dopant Diffusion in SiGe Ardechir
Pakfar1, 2, A. Poncet2, T. Schwartzmann1 and H. Jaouen1 1STMicroelectronics, France. 2LPM-INSA de Lyon, France |
14.40 |
A
Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si1-xGex
by Carbon Insertion K. Rajendran and W.
Schoenmaker STDI/TCAD Division,
IMEC, Belgium |
15.00 |
On
the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline
Targets A. Burenkov1,
Y. Mu1, 2and H. Ryssel1 1Fraunhofer
Institute of Integrated Circuits, Germany 2Physics
Department, Shandong University, P.R.China |
15.20 |
Dynamics of p+
polysilicon gate depletion due to the formation of boron compounds in TiSi2 F. G. Lau and W.
Molzer Infineon
Technologies AG, Germany |
|
SESSION 5: Device Modeling - Athina Hall (Chairperson: K. De Meyer) |
14.00 |
Analysis
of Statistical Fluctuations due to Line Edge Roughness in sub-0.1 µm MOSFETs S. Kaya1,
A. R. Brown2, A. Asenov2, D. Magot2 and T. Linton3 1SEECS,
Ohio University, USA 2Device
Modelling Group, University of Glasgow, UK 3TCAD
Division, Intel Corporation, USA |
14.20 |
Quantum
Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective
Potential J. R. Watling1,
A.R.Brown1, A. Asenov1 and D. K. Ferry2 1University
of Glasgow, UK 2Arizona
State University, USA |
14.40 |
Finite Element
Simulation of 2D Quantum Effects in Ultra Short Channel MOSFETs with High-K Dielectric
Gates A. Poncet, B. Vergnet and M. Mouis Laboratoire de Physique de la Matiére, UMR-CNRS, France |
15.00 |
Decananometer
FDSOI Device Optimization including Random Variation Daniel Connelly Acorn Technologies, USA |
15.20 |
Fully 2D
quantum-mechanical simulation of nanoscale MOSFET's A. Pirovano1,
A. L. Lacaita1, and A. S. Spinelli2 1DEI,
Politecnico di Milano, Italy 2Dip. di
Scienze CCFFMM, Univ. dell’Insubria and INFM, Italy |
15.40-19.00 |
Poster Session |
Thursday 6 September 2001
|
SESSION 6: Plenary - Aristotelis Hall (Chairperson: G.
Wachutka) |
9.00 |
Ab-initio Electrodynamic Modeling of On-Chip Back-End
Structures (Invited) W. Schoenmaker, P.
Meuris, W. Magnus IMEC, Belgium |
9.45 |
Analysis
of Hot-Carrier-Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo
Simulation (Invited) Yoshinari Kamakura,
Kazuaki Deguchi, and Kenji Taniguchi Department of
Electronics and Information Systems, Osaka University, Japan |
10.30 |
Coffee
Break
|
|
SESSION 7: Process Modeling III - Aristotelis Hall (Chairperson: M.
Hane) |
11.00 |
Acceleration of
Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High
Concentrations Scott T. Dunham
and Zudian Qin Department of
Electrical Engineering, University of Washington, USA. |
11.20 |
Interstitial Cluster Evolution and Transient Phenomena in Si-crystal Antonino La Magna1,
Salvo Coffa1, Sebania Libertino1, Matthias Strobel 1 and
Luciano Colombo2 1CNR-IMETEM,
Italy 2Dipartimento
di Fisica, Universitá di Cagliari and INFM, Italy |
11.40 |
Monitoring
Arsenic In-Situ Doping with Advanced Models for Poly-Silicon CVD W. Pyka1,
C. Heitzinger1, N. Tamaoki2, T. Takase2, T. Ohmine2 and S. Selberherr1 1Institute
for Microelectronics, TU Vienna, Austria 2TOSHIBA
Corporate R&D Center, Japan. |
12.00 |
Equipment
and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer
Planetary Reactor M. Dauelsberg1,
M. Deufel1, M. Reinhold1, G. Strauch1, T. Bergunde2
1AIXTRON AG, Germany 2Ferdinand-Braun
Institute, Germany |
12.20 |
Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si-thin films
by Nanosecond-Pulse Excimer Laser A. T. Voutsas1,
H. Kisdarjono2, R. Solanki2 and A. Kumar3 1Sharp
Laboratories of America, USA 2Oregon
Graduate Institute of Science and Technology, USA 3Fluent Inc., USA |
|
SESSION8: Device Modeling II - Athina Hall (Chairperson: P.
Oldiges) |
11.00 |
2D
Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model
and Full-Band Monte-Carlo Generated Local Noise Sources S. Decker, C.
Jungemann, B. Neinhüs and B. Meinerzhagen University of Bremen,
ITEM, Germany. |
11.20 |
Variance and Covariance Estimation in Stationary Monte Carlo Device
Simulation H. Kosina, M.
Nedjalkov and S. Selberherr Institute of
Microelectronics, TU Vienna, Austria |
11.40 |
Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical
Simulation Matsuto Ogawa and
Tanroku Miyoshi Department of
Electrical and Electronics Engineering, Kobe University, Japan |
12.00 |
2-D
Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson
and Current-continuity Equation for MOSFET Chung-Kuang Huang
and Neil Goldsman Department of
Electrical Engineering, University of Maryland, USA |
12.20 |
Boundary
Condition Models for Terminal Current Fluctuations M. Nedjalkov, T.
Grasser, H. Kosina and S. Selberherr Institute for
Microelectronics, TU Vienna, Austria |
12.40 |
Lunch
|
|
SESSION 9:Plenary - Aristotelis Hall (Chairperson: K.
Nishi) |
14.00 |
Electron velocity in sub-50 nm channel MOSFETs (Invited) Dimitri A. Antoniadis,
Ihsan J. Djomehri and Anthony Lochtefeld Microsystems
Technology Laboratories, Massachusetts Institute of
Technology, USA |
14.45 |
3D
Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by
Discrete Dopants, Oxide Thickness Fluctuations and LER (Invited) Asen Asenov Department of
Electronics and Electrical Engineering, University of Glasgow, UK |
15.30 |
Coffee
Break
|
|
SESSION 10 Plasma - Athina Hall (Chairperson: W.
Molzer) |
16.00 |
Modeling of Reactive Ion Etching for Si/SiO2 Systems S. Hamaguchi and H.
Ohta Department of
Fundamental Energy Science, Kyoto University, Japan |
16.20 |
Simulation and Prediction of Aspect Ratio Dependent Phenomena during SiO2
and Si Feature Etching in Fluorocarbon Plasmas G. Kokkoris1, 2,
E. Gogolides1, and A.G. Boudouvis2 1Institute
of Microelectronics, NCSR “Demokritos”, Greece 2 Department
of Chemical Engineering, National Technical University of Athens, Greece |
16.40 |
System Level
Modeling of an Electrostatic Torsional Actuator Robert
Sattler1, Gerhard Wachutka1, Florian Plötz2 and
Sebastian Hoffmann3 1Institute
for Physics of Electrotechnology, Munich University of Technology, Germany 2Infineon
Technologies AG, Germany 3Optical
Communications and High Frequency Engineering |
|
|
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SESSION 11 Device Modeling III - Aristotelis Hall
|
16.00 |
Impact of
Substrate Resistance on Drain Current Noise in MOSFETs Jung-Suk Goo1,
Simona Donati2, Chang-Hoon Choi1, Zhiping Yu1, Thomas H.
Lee1 and Robert W. Dutton1 2Dipartimento
di Elettronica, Politecnico Di Torino, Italy. |
16.20 |
An Efficient Frequency-Domain Analysis Technique of MOSFET Operation Kyu-Il Lee1,
Jinsoo Kim1, Hyungsoon Shin2, Chanho Lee3, Young June Park1
and Hong Shick Min1 1School of
Electrical Engineering and Computer Science, Seoul National University, Korea 2Dept. of
Information Electronics Engineering Ewha Womans University, Korea 3School of
Electronic Engineering, Soongsil University, Korea |
16.40 |
Modeling
of Bias Dependent Fluctuations of Flicker Noise of MOSFETs Ken’ichiro Sonoda1,
Motoaki Tanizawa1, Katsumi Eikyu1, Kiyoshi Ishikawa1,
Toshio Kumamoto2, Hiroyuki Kouno2, and Masahide Inuishi1
1Mitsubishi
Electric Corp., Japan 2ULSI
Development Center, System LSI Div. |
20.00 |
Conference
Dinner
|
Friday 7 September 2001
|
SESSION 12 Plenary - Aristotelis Hall (Chairperson: P.
Leon) |
9.00 |
Compact MOS Modeling for RF CMOS Circuit Simulation
(Invited) A.J. Scholten, R. van
Langevelde, L.F. Tiemeijer, R.J. Havens, and D.B.M. Klaassen Philips Research
Laboratories, The Netherlands |
9.45 |
Statistical Analysis of VLSI Using TCAD (Invited) Naoyuki Shigyo System LSI Design
Division, Toshiba Corporation Semiconductor Company, Japan |
10.30 |
Coffee
Break
|
|
SESSION 13: Non-Si Devices - Athina Hal (Chairperson: S.
Jones) |
11.00 |
Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs
MESFETs A. Wakabayashi, Y.
Mitani, D. Kasai and K. Horio Faculty of Systems
Engineering, Shibaura Institute of Technology, Japan |
11.20 |
Monte Carlo simulation of multi-band carrier transport in semiconductor
materials with complex unit cells H-E. Nilsson1,
A. Martinez2, M. Hjelm1,2, E. Bellotti3 and K. Brennan4 1Dept. of
Information Technology and Media, Sweden 2Dept. of
Electronics, Kungl. Tekniska Högskolan, Sweden 3Department
of Electrical and Computer Engineering, Boston University, USA 4School of
Electrical and Computer Engineering, Georgia Tech, USA |
11.40 |
Modeling
Semiconductor Carbon Nanotube Rectifying Heterojunctions Gary Pennington
and Neil Goldsman Department of
Electrical Engineering, University of Maryland, USA. |
12.00 |
Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger
Equation with a Hydrodynamic Transport Model J. Höntschel1,
R. Stenzel1, W. Klix2, F. Ertl3, T. Asperger3,
R. A. Deutschmann3, M. Bichler3 and G. Abstreiter3 1University
of Applied Sciences Dresden, Germany 2Dresden
University of Technology, Germany 3Walter
Schottky Institute, TU Munich, Germany |
12.20 |
A Computational Efficient Method for HBT Intermodulation Distortions and
Two-Tone Characteristics Simulation Kuen-Yu Huang, Yiming
Li, C. P. Lee, and S. M. Sze Department of
Electronics Engineering, National Chiao Tung University, Taiwan |
|
SESSION 14: Compact Modeling-SOI : Aristotelis Hall (Chairperson: S.
Odanaka) |
11.00 |
Modeling
the Impact of Body-to-body Leakage in Partially-Depleted
SOI CMOS Technology MeiKei
Ieong1, Ralph Young1, Heemyong Park1, Werner Rausch1,
Isabel Yang1, Samuel Fung1, Fariborz Assaderaghi2 and
H-S Philip Wong2 1IBM
SRDC, USA 2IBM T.J.
Watson Research Center, USA |
11.20 |
Compact
device model for partially depleted SOI-MOSFETs Y. Fujii, R.
Yoshimura, T. Matsuoka and K. Taniguchi Department of
Electronic and Information Systems, Graduate School of Engineering, Osaka University,
Japan |
11.40 |
Two-Dimensional
Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET's Hans van Meer and
Kristin De Meyer STDI division, IMEC,
Belgium ESAT, K.U. Leuven,
Belgium |
12.00 |
3D
Thermal Analysis for SOI and its impact on Circuit Performance R.V.
Joshi1, S.S. Kang2, and C.T. Chuang1 1IBM, T.J.Watson Res. Center, USA 2IBM, USA |
12.20 |
Modelling
of High-Voltage SOI-LDMOS Transistors including Self-Heating A. C. T. Aarts1,
M. J. Swanenberg2and W.J. Kloosterman2 1Philips
Research Laboratories, The Netherlands 2Philips
Semiconductors, The Netherlands |
12.40 |
Lunch
|
|
SESSION 15: Interconnects and MEMS - Aristotelis Hall (Chairperson: W. Shoemmaker) |
14.00 |
An
Efficient Tool For Extraction of Interconnect Models in Submicron Layouts P. Maffezzoni, A.
Brambilla and A. L. Lacaita DEI, Politecnico di
Milano, Italy |
14.20 |
A Comparative Study of Two Numerical Techniques for Inductance Calculation in
Interconnect Structures C. Harlander, R.
Sabelka and S. Selberherr Institute of
Microelectronics, TU Vienna, Austria |
14.40 |
Comparison of finite element stress simulation with X-ray measurement for the
aluminum conductors with different passivation topography Tai-Kyung Kim,
Young-Pil Kim, Won-Young Chung, Young-Kwan Park and Jeong-Taek Kong Semiconductor R&D
Center, Samsung Electronics Co., Korea |
|
|
|
(Chairpeson: H. Jaouen) |
14.00 |
A New Compact Spice-like Model of E2PROM Memory Cells Suitable for
DC and Transient Simulations L. Larcher1,
P. Pavan1, M. Cuozzo2 and A. Marmiroli2 1 D.S.I.
and INFM, Universitá di Modena e Reggio Emilia, Italy 2STMicroelectronics,
Italy |
14.20 |
Simulation of Flash Memory Programming Characteristics K.
Matsuzawa and T. Ishihara Advanced LSI
Technology Laboratory, Toshiba Corporation, Japan |
14.40 |
A Figure of Merit for Flash Memory Multi-Layer Tunnel Dielectrics B. Govoreanu1, 2,
P. Blomme1, 2, M. Rosmeulen1,2, J. Van Houdt1 and K. De
Meyer1,2 1STDI
Division, IMEC Leuven, Belgium 2ESAT, KU
Leuven, Belgium |
15.00 |
Coffee
Break
|
|
SESSION 17: TCAD Application - Aristotelis Hall
(Chairperson: J. Lorenz) |
15.30 |
Enhanced Diffusion of Phosphorus due to BPSG layer in SEG-MOSFETs Jaehee Lee, Woo-Seock
Cheong, Jae-Hoon Choi and Jae-Chul Om Memory R&D
Division, Hynix Semiconductor Inc., Korea |
15.50 |
Neutron-SER Modeling
& Simulation for 0.18µm CMOS Technology Changhong Dai,
Nagib Hakim, Steve Walstra, Scott Hareland, Jose Maiz, Scott Yu and Shiuh-Wuu Lee Intel Corporation, USA |
16.10 |
TCAD Driven Process Design of 0.15µm Fully-Depleted SOI Transistor for
Low Power Applications N. Miura, H. Hayashi,
H. Komatsubara, M. Mochizuki, H. Matsuhashi, Y. Kajita and
K. Fukuda VLSI Research Center,
Oki Electric Industry Co., Japan |
16.20 |
A Simulation Evaluation of 100nm CMOS Device Performance S. K. Jones1, D. J. Bazley1, E.
Augendre2, G. Badenes2, A. de Keersgieter2 and T. Skotnicki3 1 Caswell
Technology, Marconi Optical Components, U.K 2IMEC,
Belgium 3ST
Microelectronics, France |
|
|
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SESSION 18: Modeling for Circuit Simulation - Athina Hall (Chairperson: M.
Miura-Mattausch) |
15.30 |
A Practical Approach to Modeling Strained Silicon NMOS Devices Phil Oldiges1,
Xinlin Wang1, MeiKei Ieong1, Stephen Fischer1 and Ken Rim2 1IBM
SRDC, USA 2 IBM T.J.
Watson Research Center, USA |
15.50 |
Accounting For Quantum Effects and Polysilicon Depletion in an Analytical
Design-Oriented MOSFET Model Matthias Bucher1, Jean-Michel Sallese2,
Christophe Lallement3 1 National
Technical University of Athens (NTUA), Greece 2 Swiss
Federal Institute of Technology (EPFL), Switzerland 3 ERM-PHASE/ Ecole Nationale Supérieure de Physique de
Strasbourg, France |
16.10 |
Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including
ESD Simulation V. Axelrad1,
Y. Huh2, J.W. Chen2 and P.Bendix2 1SEQUOIA
Design Systems, USA 2LSI Logic Corp. USA |
16.30 |
Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination B.
Ardouin, T. Zimmer, H. Mnif and P. Fouillat Laboratoire de Microélectronique IXL, University of Bordeaux
I, France |
17.00 |
Conference
Closing
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Sispad 2001 | Scope and Topics | Committees | | Invited_Speakers |Conference Program | Author Info | Location | Registration and Accommodation | Sponsors